BUZ111S データシートの表示（PDF） - Siemens AG
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BUZ111S Datasheet PDF : 8 Pages
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BUZ111S
SPP80N05
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
180 Ptot = 250W
l kj i h g
A
ID 140
120
100
80
60
40
f
VGS [V]
a
4.0
b
4.5
ec
5.0
d
5.5
e
6.0
f
6.5
d
g
7.0
h
7.5
i
8.0
cj
9.0
k
10.0
l
20.0
b
20
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
100
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
0.026
Ωa
0.022
RDS (on0).020
b
c
d
e
0.018
0.016
0.014
0.012
f
0.010
g
0.008
h
ji
0.006
k
0.004 VGS [V] =
0.002
abc
4.05 5.0 5.5
0.000
0 20 40
def ghi j k
6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
60 80 100 120 140 A 180
ID
I
A
D
60
40
20
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
28/Jan/1998
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