BSP322P(2009) データシートの表示（PDF） - Infineon Technologies
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BSP322P Datasheet PDF : 9 Pages
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Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Symbol Conditions
BSP322P
min.
Values
typ.
Unit
max.
R thJA
minimal footprint,
steady state
-
6 cm2 cooling area1),
-
steady state
-
115 K/W
-
70
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=0 V, I D=-250 µA -100
-
-V
V GS(th) V DS=V GS,I D=-380 µA
-2.0
-1.5
-1.0
I DSS
V DS=-100 V, V GS=0 V,
T j=25 °C
-
-0.1
-1 µA
V DS=-100 V, V GS=0 V,
T j=150 °C
-
I GSS
V GS=-20 V, V DS=0 V
-
R DS(on) V GS=-10 V, I D=-1 A
-
-10
-100
-10
-100 nA
600
800 mΩ
V GS=-4.5 V,
I D=-0.93 A
-
808 1000
g fs
|V DS|>2|I D|R DS(on)max,
I D=-0.8 A
0.7
1.4
-S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.03
page 2
2009-02-17
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