BSP298 データシートの表示（PDF） - Infineon Technologies

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BSP298

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP298

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 0.5 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 0.3 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 0.3 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 0.3 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 0.3 A

RGS = 50 Ω

gfs

0.5

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

S

1.2

-

pF

300

400

50

75

20

30

ns

10

15

25

40

30

40

20

30

Rev. 2.6

3

2012-11-2

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