BSP298 データシートの表示（PDF） - Infineon Technologies
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BSP298 Datasheet PDF : 10 Pages
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BSP298
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogenfree according to IEC61249221
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP298
Type
BSP298
VDS
400 V
Pb-free
Yes
ID
0.5 A
RDS(on)
3Ω
Package
PG-SOT223
Marking
BSP298
Tape and Reel Information Packaging
H6327
Dry
Maximum Ratings
Parameter
Continuous drain current
TA = 26 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V, RGS = 25 Ω
L = 125 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TA = 25 °C
ESD Class
JESD22-A114-HBM
Symbol
ID
IDpuls
EAS
VGS
Ptot
Values
Unit
A
0.5
2
mJ
130
± 20
V
W
1.8
Class 1b
Rev. 2.6
1
2012-11-29
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