BSP129 データシートの表示（PDF） - Siemens AG

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BSP129

SIPMOS® Small-Signal Transistor

Siemens AG 

BSP 129

Gate threshold voltage VGS(th) = f (Tj)

parameter: VDS = 3 V, ID = 1 mA, (spread)

Forward characteristics of reverse diode

IF = f (VSD)

parameter: tp = 80 µs, Tj, (spread)

Drain current ID = f (TA)

parameter: VGS ≥ 3 V

Safe operating area ID = f (VDS)

parameter: D = 0, TC = 25 ˚C

Semiconductor Group

6

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