BLF6G10LS-135R データシートの表示（PDF） - NXP Semiconductors.
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BLF6G10LS-135R Datasheet PDF : 10 Pages
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NXP Semiconductors
BLF6G10LS-135R
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.8 mA 65 -
-
V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS = 28 V; ID = 950 mA 1.6 2.1 2.6 V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V -
-
3
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; 24
32
-
A
VDS = 10 V
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V -
-
300 nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
7
13 -
S
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V; -
0.1 -
Ω
ID = 6.3 A
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V; -
2.0 -
pF
f = 1 MHz
7. Application information
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz;
RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(AV)
Gp
RLin
ηD
ACPR
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
PL(AV) = 26.5 W
PL(AV) = 26.5 W
PL(AV) = 26.5 W
PL(AV) = 26.5 W
-
20.0
-
26.0
-
26.5 -
W
21.0 -
dB
−11.0 −8.0 dB
28.0 -
%
−39 −36.5 dBc
7.1 Ruggedness in class-AB operation
The BLF6G10LS-135R is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 950 mA; PL = 135 W; f = 894 MHz.
BLF6G10LS-135R_1
Product data sheet
Rev. 01 — 17 November 2008
© NXP B.V. 2008. All rights reserved.
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