
Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BF547
Table 1 Common base Y-parameters; VCB = 10 V; IE = −2 mA
f (MHz)
Y11
REAL
(mS)
IMAG.
(mS)
Y21
REAL
(mS)
IMAG.
(mS)
40
100
200
300
400
500
600
700
800
900
1 000
69.0
−10.2
−68.0
12.3
60.4
−20.6
−58.0
25.6
45.0
−27.4
−39.1
34.5
34.3
−26.4
−25.4
34.0
27.7
−23.3
−17.2
31.1
24.0
−20.4
−11.7
27.6
21.5
−18.0
−7.8
25.0
20.0
−15.6
−5.3
22.6
18.6
−14.0
−3.0
20.2
18.3
−12.8
−1.3
18.7
17.8
−11.7
−0.1
17.1
Table 2 Common base Y-parameters; VCB = 10 V; IE = −5 mA
f (MHz)
Y11
REAL
(mS)
IMAG.
(mS)
Y21
REAL
(mS)
IMAG.
(mS)
40
100
200
300
400
500
600
700
800
900
1 000
132.6
−35.7
−130.5
38.8
96.3
−62.0
−91.1
67.9
54.7
−57.8
−46.0
64.7
37.5
−46.9
−26.4
53.8
29.2
−38.6
−16.6
45.8
25.3
−32.8
−11.0
39.8
22.0
−28.4
−6.3
35.0
20.3
−25.2
−3.3
31.4
18.7
−22.6
−0.6
27.6
17.8
−20.7
1.4
25.2
17.3
−19.1
3.0
23.0
Y12
REAL
(mS)
IMAG.
(mS)
−0.02
−0.1
−0.06
−0.3
−0.10
−0.6
−0.20
−0.8
−0.20
−1.0
−0.20
−1.2
−0.20
−1.4
−0.20
−1.6
−0.20
−1.8
−0.20
−2.0
−0.20
−2.2
Y12
REAL
(mS)
IMAG.
(mS)
−0.06
−0.2
−0.20
−0.5
−0.30
−0.7
−0.40
−0.8
−0.40
−1.0
−0.40
−1.3
−0.40
−1.4
−0.40
−1.6
−0.40
−1.9
−0.40
−2.1
−0.40
−2.3
Y22
REAL
(mS)
IMAG.
(mS)
−0.01
0.3
−0.08
0.7
0.19
1.4
0.29
1.9
0.37
2.5
0.45
3.0
0.53
3.6
0.60
4.2
0.69
4.7
0.82
5.3
0.95
5.9
Y22
REAL
(mS)
IMAG.
(mS)
−0.06
0.4
0.21
0.8
0.38
1.4
0.47
2.0
0.58
2.5
0.63
3.1
0.71
3.6
0.80
4.2
0.88
4.7
1.01
5.3
1.15
6.0
September 1995
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