BF1206F データシートの表示（PDF） - Philips Electronics
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BF1206F Datasheet PDF : 20 Pages
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Philips Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
7. Static characteristics
Table 7: Static characteristics
Tj = 25 °C.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain cut-off current
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
[1] RG1 connects gate 1 to VGG = 2.8 V.
Conditions
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
amplifier B
VGS = VDS = 0 V; IG1-S = 10 mA
VGS = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 2.5 V; VDS = 2.8 V
amplifier A; RG1 = 270 kΩ
amplifier B; RG1 = 220 kΩ
VG1-S = 5 V; VG2-S = VDS = 0 V
amplifier A
amplifier B
VG2-S = 5 V; VG1-S = VDS = 0 V;
8. Dynamic characteristics
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.35 -
[1]
3-
3-
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
6.5 mA
6.5 mA
- - 50 nA
- - 50 nA
- - 20 nA
8.1 Dynamic characteristics for amplifier A
Table 8: Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
|yfs|
forward transfer admittance Tj = 25 °C
Ciss(G1) input capacitance at gate1 f = 100 MHz
Ciss(G2) input capacitance at gate2 f = 100 MHz
Coss
output capacitance
f = 100 MHz
Crss
reverse transfer capacitance f = 100 MHz
Gtr
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
NF
noise figure
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
BF1206F_1
Product data sheet
Rev. 01 — 30 January 2006
Min Typ
17 22
[1] -
2.4
[1] -
3.2
[1] -
1.1
[1] -
15
[1]
- 31
- 28
- 23
- 3.5
- 1.0
- 1.1
Max Unit
32 mS
2.9 pF
-
pF
-
pF
30 fF
-
dB
-
dB
-
dB
-
dB
1.6 dB
1.7 dB
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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