BF1206F データシートの表示（PDF） - Philips Electronics

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BF1206F

Dual N-channel dual gate MOSFET

Philips Electronics 

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

4. Marking

Table 4: Marking

Type number

BF1206F

Marking code

2N

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Per MOSFET

VDS

drain-source voltage (DC)

-

ID

drain current (DC)

-

IG1

gate1 current

-

IG2

gate2 current

-

Ptot

total power dissipation

Tsp ≤ 107 °C [1] -

Tstg

storage temperature

−65

Tj

junction temperature

-

[1] Tsp is the temperature at the solder point of the source lead.

Max

6

30

±10

±10

180

+150

150

Unit

V

mA

mA

mA

mW

°C

°C

250

Ptot

(mW)

200

001aac193

150

100

50

0

0

50

Fig 1. Power derating curve

100

150

200

Tsp (˚C)

6. Thermal characteristics

BF1206F_1

Product data sheet

Table 6:

Symbol

Rth(j-sp)

Thermal characteristics

Parameter

thermal resistance from junction

to solder point

Conditions

Typ

Unit

240

K/W

Rev. 01 — 30 January 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

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