BD546B データシートの表示（PDF） - Bourns, Inc
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BD546B Datasheet PDF : 5 Pages
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BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
Collector cut-off
current
Emitter cut-off
current
Forward current
hFE
transfer ratio
VCE(sat)
VBE
hfe
|hfe|
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = -30 mA
(see Note 4)
VCE = -40 V
VCE = -60 V
VCE = -80 V
VCE = -100 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
VCE = -4 V
IB = -625 mA
IB = -2 A
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -1 A
IC = -5 A
IC = -10 A
IC = -5 A
IC = -10 A
IC = -10 A
IC = -0.5 A
IC = -0.5 A
BD546
-40
BD546A
-60
BD546B
-80
BD546C
-100
BD546
-0.4
BD546A
-0.4
BD546B
-0.4
BD546C
-0.4
BD546/546A
-0.7
BD546B/546C
-0.7
-1
60
(see Notes 4 and 5)
25
10
-0.8
(see Notes 4 and 5)
-1
(see Notes 4 and 5)
-1.8
f = 1 kHz
20
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.47 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = -6 A
VBE(off) = 4 V
IB(on) = -0.6 A
RL = 5 Ω
IB(off) = 0.6 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.4
µs
0.7
µs
PRODUCT INFORMATION
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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