BD139 データシートの表示（PDF） - Unisonic Technologies

部品番号

コンポーネント説明

メーカー

BD139

NPN SILICON TRANSISTOR

Unisonic Technologies 

BD139

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current (DC)

IC

1.5

A

Peak Collector Current

ICM

2

A

Peak Base Current

lBM

1

A

TO-126

Power Dissipation (Ta=25°C)

TO-251

PD

1.25

W

1

W

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-65~+150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Cut-Off Current

ICBO

IE=0, VCB=30V

IE=0, VCB=30V, TJ=125°C

100 nA

10 μA

Emitter Cut-Off Current

IEBO IC=0, VEB=5V

100 nA

IC=5mA

40

DC Current Gain

VCE=2V (See Fig.1) IC =150mA 63

250

hFE

IC =500mA 25

DC Current Gain

BD139-10

BD139-16

IC =150mA, VCE=2V

(See Fig.1)

63

160

100

250

Collector-Emitter Saturation Voltage VCE(SAT) IC =500 mA, IB=50mA

0.5

V

Base-Emitter Voltage

VBE IC =500 mA, VCE=2V

1

V

Transition Frequency

fT IC =500 mA, VCE=5V, f=100MHz

190

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R204-007.B

Share Link: