BCR2PM-12RE データシートの表示（PDF） - Renesas Electronics

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BCR2PM-12RE

Triac Low Power Use

Renesas Electronics 

BCR2PM-12RE

Parameter

RMS on-state current

Surge on-state current

I2t for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Mass

Notes: 1. Gate open.

Symbol

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VGM

IGM

Tj

Tstg

—

Ratings

2

10

0.41

1

0.1

6

1

– 40 to +150

– 40 to +150

2.0

Unit

Conditions

A

Commercial frequency, sine full wave

360° conduction

A

60Hz sinewave 1 full cycle, peak value,

non-repetitive

A2s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

W

W

V

A

°C

°C

g

Typical value

Electrical Characteristics

Parameter

Symbol Min. Typ. Max. Unit

Test conditions

Repetitive peak off-state current

IDRM

—

On-state voltage

VTM

—

Gate trigger voltageNote2

ΙΙ

VRGTΙ

—

Gate trigger currentNote2

ΙΙΙ

VRGTΙΙΙ

—

ΙΙ

IRGTΙ

—

ΙΙΙ

IRGTΙΙΙ

—

—

1.0

mA Tj = 150°C, VDRM applied

—

1.6

V Tj = 25°C, ITM = 1.5 A,

Instantaneous measurement

—

2.0

V Tj = 25°C, VD = 6 V, RL = 6 Ω,

—

2.0

V

RG = 330 Ω

—

10

mA Tj = 25°C, VD = 6 V, RL = 6 Ω,

—

10

mA RG = 330 Ω

Gate non-trigger voltage

Thermal resistance

VGD

0.1

—

—

V Tj = 150°C, VD = 1/2 VDRM

Rth (j-a)

—

—

45 °C/W Junction to ambient,

Natural convection

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

Rev.1.00 Jul 31, 2006 page 2 of 6

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