NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
Product data sheet
BC369
−2.4
handboICok, halfpage
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
MLE297
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−1
−2
−3
−4
−5
VCE (V)
BC369-16.
Tamb = 25 °C.
(1) IB = −18 mA.
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
(5) IB = −10.8 mA.
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
(9) IB = −3.6 mA.
(10) IB = −1.8 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
−1000
handbook, halfpage
VBE
(mV)
−800
MLE294
−600
−400
−200
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
BC369-16.
VCE = −1 V.
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
2004 Nov 05
6