SBAV70WT1G データシートの表示（PDF） - ON Semiconductor

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SBAV70WT1G

Dual Switching Diode Common Cathode

ON Semiconductor 

BAV70W, SBAV70W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

V

100

−

Reverse Voltage Leakage Current (Note 3)

(VR = 100 V)

(VR = 50 V)

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

IR

−

1.0

mA

−

100

nA

VF

mV

−

715

−

855

−

1000

−

1250

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

CD

pF

−

1.5

Reverse Recovery Time

(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)

trr

ns

−

6.0

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns) (Figure 2)

VRF

V

−

1.75

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. For each individual diode while the second diode is unbiased.

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