BAV70LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
Reverse Voltage Leakage Current (Note 3)
Diode Capacitance
(I(BR) = 100 mA)
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
(VR = 0 V, f = 1.0 MHz)
V(BR)
IR
CD
70
−
V
mA
−
60
−
2.5
−
100
−
1.5
pF
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
−
715
−
855
−
1000
−
1250
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
RL = 100 W
3. For each individual diode while second diode is unbiased.
trr
−
6.0
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2