NXP Semiconductors
Schottky barrier triple diode
Product data sheet
BAT754L
FEATURES
• Very low forward voltage
• Guard ring protected
• Low diode capacitance
• Three independent diodes in a small plastic SMD
package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption applications (e.g. hand-held
applications).
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode 1
anode 2
anode 3
cathode 3
cathode 2
cathode 1
6 54
6 54
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 small SMD plastic package.
1 23
Top view
1 23
MBL256
MARKING
TYPE NUMBER
BAT754L
MARKING CODE
L1
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
tp < 1 s; δ < 0.5
tp < 10 ms
MIN. MAX. UNIT
−
30
V
−
200 mA
−
300 mA
−
600 mA
−65 +150 °C
−
125 °C
−65 +125 °C
2001 Jan 18
2