BAP63-05W,115 データシートの表示（PDF） - NXP Semiconductors.

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BAP63-05W,115

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

Silicon PIN diode

GRAPHICAL DATA

10

handbook, halfpage

rD

(Ω)

1

MGW126

10−1

10−1

1

10 IF (mA) 102

f = 100 MHz; Tj = 25 C.

Fig.2 Forward resistance as a function of

forward current; typical values.

Product specification

BAP63-05W

500

handbook, halfpage

Cd

(fF)

400

MGW133

300

200

100

0

0

4

8

12

16

20

VR (V)

f = 1 MHz; Tj = 25 C.

Fig.3 Diode capacitance as a function of reverse

voltage; typical values.

0

handbook, halfpage

| s 21| 2

(dB)

− 0.1

− 0.2

− 0.3

(1)

(2)

(3)

(4)

MGW134

− 0.4

− 0.5

0

(1) IF = 100 mA.

(2) IF = 10 mA.

1

2

(3) IF = 1 mA.

(4) IF = 0.5 mA.

f (GHz) 3

Diode inserted in series with a 50  stripline circuit and

biased via the analyzer Tee network.

Tamb = 25 C.

Fig.4 Insertion loss (s212) of the diode in on-state

as a function of frequency; typical values.

0

handbook, halfpage

| s 21| 2

(dB)

− 10

− 20

− 30

− 40

0

1

MGW135

2 f (GHz) 3

Diode zero biased and inserted in series with a 50  stripline circuit.

Tamb = 25 C.

Fig.5 Isolation (s212) of the diode in off-state as a

function of frequency; typical values.

2001 May 18

4

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