AT49F1024-50VC データシートの表示（PDF） - Atmel Corporation
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AT49F1024-50VC Datasheet PDF : 15 Pages
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Features
• Single-voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time – 35 ns
• Internal Program Control and Timer
• 8K Word Boot Block with Lockout
• Fast Erase Cycle Time – 10 seconds
• Word-by-word Programming – 10 µs/Word Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Small 10 x 14 mm VSOP Package
• Typical 10,000 Write Cycles
Description
The AT49F1024 and the AT49F1025 are 5-volt-only in-system Flash memories. Their
1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to
35 ns with power dissipation of just 275 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 100 µA. The
only difference between the AT49F1024 and the AT49F1025 is the package.
To allow for simple in-system reprogrammability, the AT49F1024/1025 does not
require high-input voltages for programming. Five-volt-only commands determine the
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Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
AT49F1025
PLCC Top View
I/O12 7
I/O11 8
I/O10 9
I/O9 10
I/O8 11
GND 12
NC 13
I/O7 14
I/O6 15
I/O5 16
I/O4 17
39 A13
38 A12
37 A11
36 A10
35 A9
34 GND
33 NC
32 A8
31 A7
30 A6
29 A5
AT49F1024 VSOP Top View
Type 1
10 x 14 mm
A9 1
A10 2
A11 3
A12 4
A13 5
A14 6
A15 7
NC 8
WE 9
VCC 10
NC 11
CE 12
I/O15 13
I/O14 14
I/O13 15
I/O12 16
I/O11 17
I/O10 18
I/O9 19
I/O8 20
40 GND
39 A8
38 A7
37 A6
36 A5
35 A4
34 A3
33 A2
32 A1
31 A0
30 OE
29 I/O0
28 I/O1
27 I/O2
26 I/O3
25 I/O4
24 I/O5
23 I/O6
22 I/O7
21 GND
1-megabit
(64K x 16)
5-volt Only
Flash Memory
AT49F1024
AT49F1025
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
Rev. 0765I–05/01
1
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