MT28C3214P2FL-10T データシートの表示（PDF） - Micron Technology

部品番号

コンポーネント説明

メーカー

MT28C3214P2FL-10T

FLASH AND SRAM COMBO MEMORY

Micron Technology 

2 MEG x 16 PAGE FLASH

256K x 16 SRAM COMBO MEMORY

Figure 4

Automated Word Programming

Flowchart

Start

Issue PROGRAM SETUP

Command and

Word Address

Issue Word Address

and Word Data

Read Status Register

Bits

NO

SR7 = 1?

YES

Full Status Register

Check (optional)1

PROGRAM

SUSPEND Loop

NO

PROGRAM

SUSPEND?

YES

BUS

OPERATION COMMAND COMMENTS

WRITE

WRITE

PROGRAM

SETUP

Data = 40h or 10h

Addr = Address of word to be

programmed

WRITE

WRITE

DATA

Data =

Addr =

Word to be

programmed

Address of word to be

programmed

READ

Status register data;

toggle OE# or CE# to update

status register.

Standby

Check SR7

1 = Ready, 0 = Busy

Repeat for subsequent words.

Write FFh after the last word programming operation

to reset the device to read array mode.

Word Program

Completed

FULL STATUS REGISTER CHECK FLOW

Read Status Register

Bits

SR1 = 0?

YES

NO PROGRAM Attempted

on a Locked Block

SR3 = 0?

NO

VPP Range Error

YES

SR4 = 0?

NO

Word Program Failed

YES

Word Program Passed

BUS

OPERATION COMMAND COMMENTS

Standby

Check SR1

1 = Detect locked block

Standby

Standby

Check SR32

1 = Detect VPP low

Check SR43

1 = Word program error

NOTE:

1. Full status register check can be done after each word or after a sequence of words.

2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.

3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation

attempts.

2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory

MT28C3214P2FL_4.p65 – Rev. 4, Pub. 4/02

17

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

Share Link: