AON2407 データシートの表示（PDF） - Alpha and Omega Semiconductor
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AON2407 Datasheet PDF : 5 Pages
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AON2407
30V P-Channel MOSFET
General Description
Product Summary
The AON2407 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS =-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
-30V
-6.3A
< 37.5mΩ
< 46mΩ
< 70mΩ
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TA=25°C
TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±12
-6.3
-5
-34
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
37
66
Max
45
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Nov 2011
www.aosmd.com
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