AON7400A データシートの表示（PDF） - Alpha and Omega Semiconductor

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AON7400A

30V N-Channel MOSFET

Alpha and Omega Semiconductor 

AON7400A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1.5 1.97 2.5

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

100

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=20A

TJ=125°C

6.2 7.5

mΩ

9.4 11.3

VGS=4.5V, ID=20A

8.4 10.5 mΩ

gFS

Forward Transconductance

VDS=5V, ID=20A

55

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

1

V

IS

Maximum Body-Diode Continuous Current

30

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

920 1150 1380 pF

125 180 235 pF

60 105 150 pF

0.55 1.1 1.65 Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

16

20

24

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=20A

7.6 9.5 11.4 nC

2

2.7 3.2 nC

Qgd

Gate Drain Charge

3

5

7

nC

tD(on)

Turn-On DelayTime

6.5

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=0.75Ω,

2

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

17

ns

tf

Turn-Off Fall Time

3.5

ns

trr

Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs

7

8.7 10.5 ns

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

11 13.5 16 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 3: Mar. 2011

www.aosmd.com

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