AOI442 データシートの表示（PDF） - Unspecified

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AOI442

60V N-Channel MOSFET

Unspecified 

AOD442/AOI442

60V N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

60

V

IDSS

Zero Gate Voltage Drain Current

VDS=48V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1.6 2.1 2.7

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

60

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=20A

TJ=125°C

16

20

mΩ

31

37

VGS=4.5V, ID=20A

20

25 mΩ

gFS

Forward Transconductance

VDS=5V, ID=20A

65

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.7

1

V

IS

Maximum Body-Diode Continuous Current

32

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1535 1920 2300 pF

108 155 200 pF

70 116 165 pF

0.3 0.65 0.8

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

38 47.6 68 nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=30V, ID=20A

20 24.2 30 nC

4.8

6

7

nC

Qgd

Gate Drain Charge

8.5 14.4 20 nC

tD(on)

Turn-On DelayTime

7.4

ns

tr

Turn-On Rise Time

VGS=10V, VDS=30V, RL=1.5Ω,

5.1

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

28.2

ns

tf

Turn-Off Fall Time

5.5

ns

trr

Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs

34

41

ns

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

46

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

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