ADG611YRU データシートの表示（PDF） - Analog Devices

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ADG611YRU

1 pC Charge Injection, 100 pA Leakage, CMOS
5 V/+5 V/+3 V Quad SPST Switches

Analog Devices 

Typical Performance Characteristics–ADG611/ADG612/ADG613

250

TA = 25؇C

200

؎3.3V

150

؎4.5V

؎2.7V ؎3V

100

50

؎5.5V

؎5V

0

–5 –4 –3 –2 –1 0 1 2 3 4 5

VD, VS – V

TPC 1. On Resistance vs. VD(VS),

Dual Supply

600

TA = 25؇C

VSS = 0V

500

400

300

200

VDD = 2.7V

VDD = 3V

VDD = 3.3V

VDD = 4.5V

100

VDD = 5V

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VD, VS – V

TPC 2. On Resistance vs. VD(VS),

Single Supply

250

VDD = +5V

VSS = –5V

200

150

+125؇C

+85؇C

100

+25؇C

50

–40؇C

0

–5 –4 –3 –2 –1 0 1 2 3 4 5

VD, VS – V

TPC 3. On Resistance vs. VD(VS) for

Different Temperatures, Dual Supply

600

VDD = 5V

VSS = 0V

500

400

300

+125؇C

200

+85؇C

100

0

0

–40؇C

+25؇C

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VD, VS – V

TPC 4. On Resistance vs. VD(VS)

for Different Temperatures,

Single Supply

2

IS (OFF)

1

0

–1

ID (OFF)

–2

–3

IS, ID(ON)

–4

–5 VDD = +5V

VSS = –5V

–6

0 20 40 60 80 100 120

TEMPERATURE – ؇C

TPC 5. Leakage Currents vs.

Temperature, Dual Supply

2

IS (OFF)

1

0

–1

ID (OFF)

–2

IS, ID(ON)

–3

–4

–5 VDD = 5V

VSS = 0V

–6

0 20 40 60 80 100 120

TEMPERATURE – ؇C

TPC 6. Leakage Currents vs.

Temperature, Single Supply

2.0

TA = 25؇C

1.5

VDD = +3V

VSS = 0V

1.0

0.5

VDD = +5V

VSS = 0V

0

–0.5

–1.0

VDD = +5V

VSS = –5V

–1.5

–2.0

–5 –4 –3 –2 –1 0 1 2 3 4 5

VS – V

TPC 7. Charge Injection vs.

Source Voltage

120

100

tON,V DD = +5V

VSS = 0V

80

60

tON,V DD = +5V

VSS = –5V

40

20

0

–40 –20

tOFF,V DD = +5V

VSS = 0V

tOFF,V DD = +5V

VSS = –5V

0 20 40 60 80 100 120

TEMPERATURE – ؇C

TPC 8. tON/tOFF Times vs.

Temperature

0

–2

–4

–6

–8

–10

–12

–14

–16

–18

0.3

VDD = –5V

VSS = +5V

VDD = 5V

VSS = 0V

TA = 25؇C

1

10

100

FREQUENCY – MHz

1000

TPC 9. On Response vs. Frequency

REV. 0

–7–

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