Data Sheet
ADG5208/ADG5209
Parameter
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
tON (EN)
tOFF (EN)
Break-Before-Make Time Delay, tD
25°C
170
205
150
180
180
225
55
−40°C to +85°C
225
195
225
Charge Injection, QINJ
0.3
Off Isolation
−86
Channel-to-Channel Crosstalk
−80
−3 dB Bandwidth
ADG5208
105
ADG5209
195
Insertion Loss
−6.2
CS (Off)
2.7
CD (Off)
ADG5208
32
ADG5209
16
CD (On), CS (On)
ADG5208
35
ADG5209
20
POWER REQUIREMENTS
IDD
80
100
VDD
1 Guaranteed by design; not subject to production test.
−40°C to +125°C
235
215
230
25
130
9/40
Unit
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
MHz typ
dB typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
V min/V max
Test Conditions/Comments
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 33
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 35
RL = 300 Ω, CL = 35 pF
VS = 18 V; see Figure 35
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 18 V; see Figure 34
VS = 18 V, RS = 0 Ω, CL = 1 nF;
see Figure 36
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 31
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29
RL = 50 Ω, CL = 5 pF; see Figure 32
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 32
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VS = 18 V, f = 1 MHz
VDD = 39.6 V
Digital inputs = 0 V or VDD
GND = 0 V, VSS = 0 V
Rev. C | Page 7 of 24