74LVC1G58GV データシートの表示（PDF） - Philips Electronics
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74LVC1G58GV Datasheet PDF : 18 Pages
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Philips Semiconductors
74LVC1G58
Low-power configurable multiple function gate
Table 9: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Ioff
power OFF leakage
VI or VO = 5.5 V; VCC = 0 V
current
-
±0.1
ICC
quiescent supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
∆ICC
additional quiescent
supply current per pin
VI = VCC − 0.6 V; IO = 0 A;
VCC = 2.3 V to 5.5 V
CI
input capacitance
Tamb = −40 °C to +125 °C
VOL
LOW-level output voltage VI = VCC or GND
IO = 100 µA; VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
IO = 24 mA; VCC = 3.0 V
IO = 32 mA; VCC = 4.5 V
VOH
HIGH-level output voltage VI = VCC or GND
IO = −100 µA; VCC = 1.65 V to 5.5 V
IO = −4 mA; VCC = 1.65 V
IO = −8 mA; VCC = 2.3 V
IO = −12 mA; VCC = 2.7 V
IO = −24 mA; VCC = 3.0 V
IO = −32 mA; VCC = 4.5 V
ILI
input leakage current
VI = 5.5 V or GND; VCC = 3.6 V
Ioff
power OFF leakage
VI or VO = 5.5 V; VCC = 0 V
current
-
0.1
-
5
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
VCC − 0.1 -
0.95
-
1.7
-
1.9
-
2.0
-
3.4
-
-
-
-
-
ICC
∆ICC
quiescent supply current
additional quiescent
supply current per pin
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 2.3 V to 5.5 V
-
-
-
-
[1] Typical values are measured at maximum VCC and Tamb = 25 °C.
Max Unit
±10
µA
10
µA
500
µA
-
pF
0.1
V
0.7
V
0.45 V
0.6
V
0.8
V
0.8
V
-
V
-
V
-
V
-
V
-
V
-
V
±100 µA
±200 µA
200
µA
5000 µA
9397 750 13852
Product data sheet
Rev. 01 — 15 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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