74LVC1G10DW データシートの表示（PDF） - Diodes Incorporated.
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74LVC1G10DW Datasheet PDF : 14 Pages
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74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics TA=-40 °C to 125 °C (All typical values are at Vcc = 3.3V, TA = 25°C)
Symbol
Parameter
Test Conditions
Vcc
Min
Typ. Max Unit
IOH = -100μA
IOH = -4mA
VOH
High Level Output
Voltage
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
IOL = 100μA
IOL = 4mA
VOL
High-level Input Voltage IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
II
Input Current
VI = 5.5 V or GND
IOFF
Power Down Leakage VI or VO = 5.5V
Current
ICC
Supply Current
VI = 5.5V of GND
IO=0
ΔICC
Additional Supply
Current
Input at VCC –0.6 V
Ci
Input Capacitance
Vi = VCC – or GND
SOT26
θJA
Thermal Resistance
Junction-to-Ambient
SOT363
DFN1010
SOT26
θJC
Thermal Resistance
Junction-to-Case
SOT363
DFN1010
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
1.65V to 5.5V
3 V to 5.5V
3.3
(Note 4)
(Note 4)
VCC – 0.1
0.95
1.7
1.9
2.0
3.4
4
166
333
231
46
102
TBD
V
0.1
0.70
0.45
V
0.60
0.80
0.80
± 20 μA
± 20 μA
40
μA
5000 μA
pF
oC/W
oC/W
Notes:
4. Test condition for SOT26, SOT363 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad
layout.
74LVC1G10
Document number: DS35121 Rev. 1 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
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