74LVC1G04GW データシートの表示（PDF） - Philips Electronics
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74LVC1G04GW Datasheet PDF : 16 Pages
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Philips Semiconductors
Single inverter
Product specification
74LVC1G04
FEATURES
• Wide supply voltage range from 1.65 to 5.5 V
• High noise immunity
• Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Latch-up performance ≤250 mA
• Direct interface with TTL levels
• Inputs accept voltages up to 5 V
• Multiple package options
• Specified from −40 to +125 °C.
DESCRIPTION
The 74LVC1G04 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Input can be driven from either 3.3 or 5 V devices. These
features allow the use of these devices in a mixed
3.3 and 5 V environment.
Schmitt trigger action at all inputs makes the circuit tolerant
for slower input rise and fall time.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G04 provides the inverting buffer.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns.
SYMBOL
tPHL/tPLH
CI
CPD
PARAMETER
CONDITIONS
propagation delay input A to output Y
input capacitance
VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
VCC = 2.7 V; CL = 50 pF; RL = 500 Ω
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω
power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2
TYPICAL UNIT
3
ns
2
ns
2.3
ns
2
ns
1.6
ns
5
pF
14
pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
2002 Oct 02
2
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