2N7002W, 2V7002W
TYPICAL CHARACTERISTICS
30
Ciss
20
Coss
10
TJ = 25°C
VGS = 0 V
5
TJ = 25°C
4
ID = 0.2 A
3
2
1
Crss
0
0
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
VGS = 0 V
1
TJ = 85°C
TJ = 25°C
1.0E−6
VGS = 0 V
1.0E−7
1.0E−8
TJ = 150°C
TJ = 125°C
0.1
TJ = 85°C
1.0E−9
0.01
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.0E−10
5
TJ = 25°C
10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 10. Drain−to−Source Leakage Current
vs. Voltage
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4