2STW4468 データシートの表示（PDF） - STMicroelectronics

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2STW4468

High power NPN epitaxial planar bipolar transistor

STMicroelectronics 

2STW4468

2 Electrical characteristics

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 200 V

0.1 µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 6 V

0.1 µA

V(BR)CEO(1)

Collector-emitter

breakdown voltage (IB = 0)

IC = 50 mA

140

V

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

200

V

V(BR)EBO (1)

Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

6

V

VCE(sat) (1)

Collector-emitter

saturation voltage

IC = 5 A

IC = 7 A

IB = 500 mA

IB = 700 mA

0.5

V

0.7

V

VBE

Base-emitter voltage

VCE = 5 V

IC = 5 A

1.3

V

hFE

DC current gain

IC = 3 A

IC = 5 A

VCE = 4 V

70

VCE = 4 V

50

140

fT

Transition frequency

IC = 0.5 A

VCE = 12 V

20

MHz

CCBO

Collector-base

capacitance

(IE = 0)

VCB = 10 V

f = 1 MHz

150

pF

Resistive Load

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC = 60 V IC = 5 A

IB1 = -IB2 = 0.5 A

0.22

µs

4.3

µs

0.5

µs

1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %

3/9

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