2STW4468 データシートの表示（PDF） - STMicroelectronics
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2STW4468 Datasheet PDF : 9 Pages
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2STW4468
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STW4468
Marking
2STW4468
Package
TO-247
Packaging
Tube
October 2008
Rev 4
1/9
www.st.com
9
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