2SK209-Y データシートの表示（PDF） - Toshiba
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2SK209-Y Datasheet PDF : 4 Pages
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2SK209
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VGDS
IG
PD
Tj
Tstg
−50
V
10
mA
150
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Marking
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
⎪Yfs⎪
Ciss
Crss
NF (1)
NF (2)
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
1
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
1.2
⎯ 14.0 mA
−0.2
⎯
−1.5
V
4.0
15
⎯
mS
⎯
13
⎯
pF
⎯
3
⎯
pF
⎯
5
⎯
dB
⎯
1
⎯
dB
2007-11-01
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