2SK1579 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SK1579

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1579

Absolute Maximum Ratings (Ta = 25°C unless otherwise specified.)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel power dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. Value on the almina ceramic board (12.5 × 20 × 0.7 mm)

Ratings

12

±7

2

4

2

1

150

–55 to +150

Unit

V

V

A

A

A

W

°C

°C

2

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