K1382 データシートの表示（PDF） - Toshiba

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K1382

FET/ Silicon N Channel MOS Type

Toshiba 

2SK1382

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)

2SK1382

Relay Drive, Motor Drive and DC−DC Converter

Applications

Unit: mm

l 4 V gate drive

l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.)

l High forward transfer admittance : |Yfs| = 47 S (typ.)

l Low leakage current

: IDSS = 100 µA (max) (VDS = 100 V)

l Enhancement−mode

: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

VDSS

100

V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

100

V

Gate−source voltage

VGSS

±20

V

Drain current

DC (Note 1)

ID

Pulse (Note 1)

IDP

60

A

240

Drain power dissipation (Tc = 25°C)

PD

200

W

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Thermal Characteristics

JEDEC

―

JEITA

―

TOSHIBA

2-21F1B

Weight: 9.75 g (typ.)

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Symbol

Rth (ch−c)

Rth (ch−a)

Max

0.625

35.7

Unit

°C / W

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

This transistor is an electrostatic sensitive device.

Please handle with caution.

1

2002-09-04

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