
2SJ452
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
ADE-208-383
1st. Edition