2SD2276P データシートの表示（PDF） - Inchange Semiconductor
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2SD2276P Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2276
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 7mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB=B 7mA
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 50V,
IC= 7A; IB1= -IB2= 7mA,
hFE-2 Classifications
Q
S
P
5000-15000 7000-21000 8000-30000
MIN TYP. MAX UNIT
140
V
2.5
V
3.0
V
100 μA
100 μA
100 μA
2000
5000
30000
20
MHz
2.0
μs
6.0
μs
1.2
μs
isc Website：www.iscsemi.cn
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