2SD2549 データシートの表示（PDF） - Panasonic Corporation

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2SD2549

Silicon NPN triple diffusion planar type Power Transistor

Panasonic Corporation 

Power Transistors

2SD2549

Silicon NPN triple diffusion planar type

For power amplification

s Features

q High forward current transfer ratio hFE which has satisfactory

linearity

q Low collector to emitter saturation voltage VCE(sat)

q Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (TC=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

80

V

Collector to emitter voltage VCEO

80

V

Emitter to base voltage

VEBO

6

V

Peak collector current

ICP

5

A

Collector current

IC

3

A

Collector power TC=25°C

dissipation

Ta=25°C

PC

20

W

2

Junction temperature

Storage temperature

Tj

150

˚C

Tstg

–55 to +150

˚C

s Electrical Characteristics (TC=25˚C)

Parameter

Symbol

Conditions

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

ICES

ICEO

IEBO

VCEO

hFE1*

hFE2

VBE

VCE(sat)

fT

ton

tstg

tf

VCE = 70V, VBE = 0

VCE = 70V, IB = 0

VEB = 6V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A

VCE = 4V, IC = 3A

VCE = 4V, IC = 3A

IC = 3A, IB = 0.375A

VCE = 10V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,

VCC = 50V

*hFE1 Rank classification

Rank

Q

P

hFE1

70 to 150 120 to 250

Unit: mm

9.9±0.3

4.6±0.2

2.9±0.2

φ3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

2.54±0.3

1 2 3 5.08±0.5

2.6±0.1

0.55±0.15

1:Gate

2:Drain

3:Source

TO–220D Full Pack Package

min

typ

max Unit

100

µA

100

µA

1

mA

80

V

70

250

10

1.8

V

0.7

V

30

MHz

0.5

µs

4.5

µs

0.5

µs

1

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