2SD2213 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

2SD2213

Silicon NPN Epitaxial/ Darlington

Renesas Electronics 

2SD2213

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

E to C diode forward voltage

Note: 1. Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

hFE

hFE

hFE

VCE(sat)

VBE(sat)

VD

Min

150

80

8

—

—

2000

5000

1000

—

—

—

Typ Max

—

—

—

—

—

—

—

5.0

—

5.0

—

—

— 30000

—

—

—

1.5

—

2.0

—

3.0

Unit

V

V

V

µA

µA

V

V

V

(Ta = 25°C)

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 65 V, IE = ∞

VCE = 2 V, IC = 0.15 A*1

VCE = 2 V, IC = 1 A*1

VCE = 2 V, IC = 1.5 A*1

IC = 1 A*1, IB = 1 mA

IC = 1 A*1, IB = 1 mA

ID = 1.5 A*1

Rev.2.00 Aug 10, 2005 page 2 of 5

Share Link: