2SD1940 データシートの表示（PDF） - SavantIC Semiconductor

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2SD1940

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1940

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=8

V(BR)CBO Collector-base breakdown voltage

IC=5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A

VBE

Base-emitter on voltage

IC=1A;VCE=5V

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=5V

COB

Collector output capacitance

f=1MHz;VCB=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=0.5A; IB1=-IB2=50mA

VCC=20V ,RL=40B

MIN TYP. MAX UNIT

85

V

100

V

6

V

2.0

V

1.5

V

0.1

mA

0.1

mA

60

320

20

15

MHz

110

pF

0.28

µs

3.60

µs

0.50

µs

hFE-1 Classifications

D

E

F

60-120 100-200 160-320

2

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