2SC5287 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SC5287

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A

VBEsat Base-emitter saturation voltage

IC=1.8A; IB=0.36A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=1.8A ; VCE=4V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IE=-0.35A ; VCE=12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1.8A; RL=139Ω

IB1=0.27A; IB2=-0.9A

VCC=250V

Product Specification

2SC5287

MIN TYP. MAX UNIT

550

V

0.5

V

1.2

V

100 μA

100 μA

10

25

50

pF

6

MHz

0.7 μs

4.0 μs

0.5 μs

2

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