2SC4793G-B-TF3-T(2016) データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
メーカー
2SC4793G-B-TF3-T Datasheet PDF : 4 Pages
| |||
2SC4793
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
230
V
Collector-Emitter Voltage
VCEO
230
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Base Current
IB
0.1
A
Collector Power Dissipation
TA=25°C
TC=25°C
PC
2.0
W
20
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Base -Emitter Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE
RANK
RANGE
SYMBOL
BVCEO
VBE
VCE(SAT)
ICBO
IEBO
hFE
fT
Cob
TEST CONDITIONS
IC=10mA, IB=0
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCB =230V, IE=0
VEB=5V, IC=0
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
230
V
1.0 V
1.5 V
1.0 µA
1.0 µA
100
320
100
MHz
20
pF
A
100-200
B
180-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R219-009.C
Share Link: 