2SC4600 データシートの表示（PDF） - SANYO -> Panasonic

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2SC4600

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

2SC4600

Symbol

Conditions

fT

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEO(sus)

VCEX(sus)

ton

tstg

tf

VCE=10V, IC=0.6A

VCB=10V, f=1MHz

IC=3A, IB=0.6A

IC=3A, IB=0.6A

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=5A, IB1=1A, L=50µH

IC=2.5A, IB1=–IB2=1A, L=1mH, clamped

IC=4A, IB1=0.8A, IB2=–1.6A, RL=50Ω, VCC=200V

IC=4A, IB1=0.8A, IB2=–1.6A, RL=50Ω, VCC=200V

IC=4A, IB1=0.8A, IB2=–1.6A, RL=50Ω, VCC=200V

Ratings

min typ

18

80

800

500

7

500

500

max

1.0

1.5

0.5

3.0

0.3

Unit

MHz

pF

V

V

V

V

V

V

V

µs

µs

µs

Switching Time Test Circuit

No.3146–2/4

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