2SC4249 データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
メーカー
2SC4249 Datasheet PDF : 5 Pages
| |||
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4249
2SC4249
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.) (f = 200 MHz)
· Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
· Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
30
V
30
V
3
V
20
mA
10
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Power gain
Noise figure
AGC voltage
(Note)
ICBO
IEBO
V (BR) CEO
hFE
Cre
fT
Gpe
NF
VAGC
VCB = 25 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 2 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 2 mA
VCC = 12 V, VAGC = 1.4 V
f = 200 MHz (Figure 1)
VCC = 12 V, GR = 30dB
f = 200 MHz
¾
¾
100
nA
¾
¾
100
nA
30
¾
¾
V
60
150 300
¾ 0.35 0.5
pF
400 650
¾
MHz
20
24
28
dB
¾
2.0 3.2
dB
3.6
4.4
5.1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC
at 1.4 V.
1
2003-03-27
Share Link: 