2SC3637 データシートの表示（PDF） - SavantIC Semiconductor
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2SC3637 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3637
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ;IB=1A
VCB=500V; IE=0
VCE=900V; RBE=0
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
VCC=200V;IC=5A;
IB1=1A; IB2=-2A
MIN TYP. MAX UNIT
500
V
2.0
V
1.5
V
10
µA
0.5 mA
1.0 mA
8
3.0
µs
0.1 0.2
µs
2
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