2SC3515R データシートの表示（PDF） - Toshiba
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2SC3515R Datasheet PDF : 6 Pages
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2SC3515
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1384
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
300
V
VCEO
300
V
VEBO
6
V
IC
100
mA
IB
20
mA
PC
500
PC
mW
1000
(Note 1)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 mmt)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07
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