2SC3089 データシートの表示（PDF） - SANYO -> Panasonic

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2SC3089

NPN Triple Diffused Planar Silicon Transistor

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SC3089

Symbol

Conditions

fT

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCEO(sus)

VCEX(sus)1

VCEX(sus)2

ton

tstg

tf

VCE=10V, IC=0.6A

VCB=10V, f=1MHz

IC=1mA, IE=0

IC=5mA, RBE=∞

IE=1mA, IC=0

IC=7A, IB=0.14A, L=50µH

IC=7A, IB1=0.14A, L=200µH, IB2=–0.14A, clamped

IC=1.2A, IB1=0.24A, L=200µH, IB2=–0.24A,

clamped

IC=4A, IB1=0.8A, IB2=–0.8A, RL=50Ω, VCC=200V

IC=4A, IB1=0.8A, IB2=–0.8A, RL=50Ω, VCC=200V

IC=4A, IB1=0.8A, IB2=–0.8A, RL=50Ω, VCC=200V

Ratings

min

typ

max

18

80

800

500

7

500

500

Unit

MHz

pF

V

V

V

V

V

550

V

1.0 µs

3.0 µs

1.0 µs

No.1012–2/4

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