C3122 データシートの表示（PDF） - Toshiba
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C3122 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
2SC3122
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.) (f = 200 MHz)
· Low noise: NF = 2.0dB (typ.) (f = 200 MHz)
· Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
30
V
30
V
3
V
20
mA
10
mA
150
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Power gain
Noise figure
AGC voltage
ICBO
VCB = 25 V, IE = 0
¾
IEBO
VEB = 2 V, IC = 0
¾
V (BR) CEO IC = 1 mA, IB = 0
30
hFE
VCE = 10 V, IC = 2 mA
60
Cre
VCB = 10 V, IE = 0, f = 1 MHz
¾
fT
VCE = 10 V, IC = 2 mA
400
Gpe
20
VCE = 12 V, VAGC = 1.4 V, f = 200 MHz
NF
¾
VAGC
VCC = 12 V, GR = 30dB, f = 200 MHz
3.6
(Note)
¾
100
nA
¾
100
nA
¾
¾
V
150 300
0.3 0.45 pF
650
¾
MHz
24
28
dB
2.0
3.2
dB
4.4 5.1
V
Note: VAGC measured by test circuit shown in Figure 1 when power gain is reduced to 30dB compared that of VAGC
at 1.4 V.
1
2003-03-19
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