2SC2788 データシートの表示（PDF） - SavantIC Semiconductor
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2SC2788 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
hFE -2
fT
DC current gain
DC current gain
Transition frequency
IC=0.8A ; VCE=5V
IC=4A ; VCE=5V
IC=0.8A ; VCE=10V
Product Specification
2SC2788
MIN TYP. MAX UNIT
400
V
500
V
7
V
1.0
V
1.5
V
100
µA
100
µA
15
50
8
20
MHz
2
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