2SB966 データシートの表示（PDF） - Inchange Semiconductor
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2SB966 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB966
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SD1289
APPLICATIONS
·For use in low frequency and
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
体 Absolute maximum ratings(Ta=25℃)
固I电NC半H导ANGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
UNIT
V
V
V
IC
Collector current
-8
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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