2SB1558 データシートの表示（PDF） - Inchange Semiconductor
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2SB1558 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1558
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-7A ; VCE=-5V
hFE-2
DC current gain
IC=-12A ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-5V
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-5
μA
-5
μA
5000
30000
2000
170
pF
30
MHz
hFE-1 Classifications
A
B
5000-12000
9000-18000
C
15000-30000
2
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