JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
COB
Output capacitance
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-10A;RL=4Ω
IB1=- IB2=-1A
VCC=40V
hFE Classifications
O
P
50-100
70-140
Y
90-180
Product Specification
2SA1492
MIN TYP. MAX UNIT
-180
V
-2.0
V
-100 μA
-100 μA
50
180
500
pF
20
MHz
0.60
μs
0.90
μs
0.20
μs
2